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DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Low On-Resistance
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
"Green" Device (Note 3)
SC59
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Case: SC59
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.014 grams (approximate)
Drain
D
Gate
Source
ESD Protected
TOP VIEW
Gate
Protection
Diode
EQUIVALENT CIRCUIT
G S
TOP VIEW
Pin Out Configuration
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
20
Units
V
Gate-Source Voltage
Drain Current
Continuous
Continuous
Pulsed
V GSS
I D
±8
1.2
4.0
V
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P d
R θ JA
T j , T STG
Value
500
250
-55 to +150
Units
mW
° C /W
° C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV DSS
20
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V
V GS = 0V, I D = 250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T j = 25 ° C
I DSS
I GSS
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10
± 10
μA
μA
V DS = 20V, V GS = 0V
V GS = ± 8V, V DS = 0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
0.5
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1.2
0.10
0.14
V
Ω
V DS = 10V, I D = 1.0mA
V GS = 4.5V, I D = 0.5A
V GS = 2.5V, I D = 0.5A
0.25
V GS = 1.5V, I D = 0.1A
Forward Transfer Admittance
Diode Forward Voltage
IY fs I
V SD
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4.2
0.8
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1.1
S
V
V DS = 10V, I D =0.5A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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220
120
45
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pF
pF
pF
V DS = 10V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t D(ON)
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10
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ns
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
t D(OFF)
t r
t f
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75
15
65
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ns
ns
ns
V DD = 5V, I D = 0.5A,
V GS = 10V, R GEN = 50 Ω
Notes:
1. Pulse width ≤ 300 μ s, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN2112SN
Document number: DS30830 Rev. 5 - 2
1 of 4
www.diodes.com
August 2011
? Diodes Incorporated
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